Indium phosphide metamorphic heterojunction bipolar transistor technology

• Main Author: K Radhakrishnan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Research Report
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: http://hdl.handle.net/10356/41824
• Institution: Nanyang Technological University

Metamorphic heterojunction bipolar transistor (MHBT) technology is attractive as it offers many advantages such as high performance InP-based devices on low cost substrates such as GaAs, improved substrate mechanical strength (less brittle), control over alloy composition, and higher throughput leading to reduced production cost. Moreover, the availability of matured backside fabrication process in the case of GaAs substrates enables the possibility of production of high performance monolithic integrated circuits. Despite many desirable features, the InP-based metamorphic HBT technology is less mature and still in its infancy. Studies are limited, and only a few resear~h works have reported on the DC and RF performance of such devices. Many technical issues need to be addressed in terms of both growth and fabrication technologies before these devices can be considered for utilization in commercial systems. The primary objective of this research project is to improve the high frequency performance of InP-based MHBT devices fabricated on GaAs substrate. In this project, it is accomplished by reducing the emitter area successfully.