Indium phosphide metamorphic heterojunction bipolar transistor technology

• Main Author: K Radhakrishnan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Research Report
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: http://hdl.handle.net/10356/41824
• Institution: Nanyang Technological University

Metamorphic heterojunction bipolar transistor (MHBT) technology is attractive as it offers many advantages such as high performance InP-based devices on low cost substrates such as GaAs, improved substrate mechanical strength (less brittle), control over alloy composition, and higher throughput l...