Indium phosphide metamorphic heterojunction bipolar transistor technology

• 主要作者: K Radhakrishnan
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Research Report
• 語言: English
• 出版: 2010
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: http://hdl.handle.net/10356/41824

Metamorphic heterojunction bipolar transistor (MHBT) technology is attractive as it offers many advantages such as high performance InP-based devices on low cost substrates such as GaAs, improved substrate mechanical strength (less brittle), control over alloy composition, and higher throughput l...