A study of dilute nitride-antimonide semiconductors for near infrared optoelectronics devices
In this thesis, GaNAsSb-based optoelectronic device structures were grown using a solid-source molecular beam epitaxy (MBE) system in conjunction with a radio frequency (RF) plasma N source and Sb valved-cracker source. To reduce the nitrogen plasma induced defects, an ion deflection plate has been...
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| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2010
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| 在線閱讀: | https://hdl.handle.net/10356/42311 |
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