Ni-alloy silicides for advanced Si technologies
This work focuses on the study of Ni- and Ni-alloy silicides to develop a suitable silicidation technology for the integration into future complementary metal-oxide-semiconductor (CMOS) devices. In the self-aligned silicidation process, metal silicide is formed not only on the single crystalline sou...
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/4464 |
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| Institution: | Nanyang Technological University |
| Summary: | This work focuses on the study of Ni- and Ni-alloy silicides to develop a suitable silicidation technology for the integration into future complementary metal-oxide-semiconductor (CMOS) devices. In the self-aligned silicidation process, metal silicide is formed not only on the single crystalline source/drain regions for contact metallization, but also on the polycrystalline gate electrode to reduce the polysilicon (poly-Si) line resistance. Hence, experiments were carried out to study the phase transformation and thermal stability of Ni- and Ni(5 and 10 at.% Pt)-silicides on both single crystalline and polycrystalline samples which include Si(100), SiGe(lOO), SiGeC(lOO), poly-Si and poly-SiGe. |
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