Effects of small gate length, gate width and s/d overhang on mosfets isolated by STI technology
193 p.
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Theses and Dissertations |
| Published: |
2011
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/46791 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| id |
sg-ntu-dr.10356-46791 |
|---|---|
| record_format |
dspace |
| spelling |
sg-ntu-dr.10356-467912023-07-04T16:58:01Z Effects of small gate length, gate width and s/d overhang on mosfets isolated by STI technology See, Kwang Seng Lau Wai Shing School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors 193 p. The focus of this dissertation is the investigation of MOS transistors with very small dimensions in terms of very short gate length (Lg), very narrow gate width (Wg) as well as very small source-drain diffusion length (Lov). The candidate observed a relatively new phenomenon of narrow width effect, which was called the anomalous narrow width effect (ANWE). For example, the threshold voltage (VT) increased with the decrease of Wg for big Wg (~ 0.6 to 1.2 µm) but VT decreased with the decrease of Wg for small Wg (< 0.6 µm); this was only observed in "very short" (e.g. 0.13 µm) NMOS transistors having a phosphorus deep source-drain implant in addition to the usual arsenic implant. ANWE is a relatively weak effect for NMOS transistors but it is a strong effect in PMOS transistors with very short Lg. DOCTOR OF PHILOSOPHY (EEE) 2011-12-23T09:55:44Z 2011-12-23T09:55:44Z 2009 2009 Thesis See, K. S. (2009). Effects of small gate length, gate width and s/d overhang on mosfets isolated by STI technology. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/46791 10.32657/10356/46791 Nanyang Technological University application/pdf |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NTU Library |
| collection |
DR-NTU |
| topic |
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
| spellingShingle |
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors See, Kwang Seng Effects of small gate length, gate width and s/d overhang on mosfets isolated by STI technology |
| description |
193 p. |
| author2 |
Lau Wai Shing |
| author_facet |
Lau Wai Shing See, Kwang Seng |
| format |
Theses and Dissertations |
| author |
See, Kwang Seng |
| author_sort |
See, Kwang Seng |
| title |
Effects of small gate length, gate width and s/d overhang on mosfets isolated by STI technology |
| title_short |
Effects of small gate length, gate width and s/d overhang on mosfets isolated by STI technology |
| title_full |
Effects of small gate length, gate width and s/d overhang on mosfets isolated by STI technology |
| title_fullStr |
Effects of small gate length, gate width and s/d overhang on mosfets isolated by STI technology |
| title_full_unstemmed |
Effects of small gate length, gate width and s/d overhang on mosfets isolated by STI technology |
| title_sort |
effects of small gate length, gate width and s/d overhang on mosfets isolated by sti technology |
| publishDate |
2011 |
| url |
https://hdl.handle.net/10356/46791 |
| _version_ |
1772826885558894592 |