Effects of small gate length, gate width and s/d overhang on mosfets isolated by STI technology

• Main Author: See, Kwang Seng
• Other Authors: Lau Wai Shing
• Format: Theses and Dissertations
• Published: 2011
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: https://hdl.handle.net/10356/46791
• Institution: Nanyang Technological University

193 p.