Advanced planarization techniques for deep sub-micron applications

In this work, the evolution of step height, film thickness and unformity, on both the STI test structures and SDRAM structure throughout the CMP process were characterized in detailed. Comparision made among the newly proposed scheme and the conventional processes such as Direct Polish (DP) Scheme a...

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Bibliographic Details
Main Author: Lim, Victor Seng Keong.
Other Authors: Goh, Wang Ling
Format: Theses and Dissertations
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/4685
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Institution: Nanyang Technological University
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Summary:In this work, the evolution of step height, film thickness and unformity, on both the STI test structures and SDRAM structure throughout the CMP process were characterized in detailed. Comparision made among the newly proposed scheme and the conventional processes such as Direct Polish (DP) Scheme and the Reverse Mask (RT) Scheme were also presented.