Advanced planarization techniques for deep sub-micron applications

Advanced planarization techniques for deep sub-micron applications

In this work, the evolution of step height, film thickness and unformity, on both the STI test structures and SDRAM structure throughout the CMP process were characterized in detailed. Comparision made among the newly proposed scheme and the conventional processes such as Direct Polish (DP) Scheme a...

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Main Author: Lim, Victor Seng Keong.
Other Authors: Goh, Wang Ling
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:http://hdl.handle.net/10356/4685
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Institution: Nanyang Technological University
id sg-ntu-dr.10356-4685
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spelling sg-ntu-dr.10356-46852023-07-04T15:19:05Z Advanced planarization techniques for deep sub-micron applications Lim, Victor Seng Keong. Goh, Wang Ling School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics In this work, the evolution of step height, film thickness and unformity, on both the STI test structures and SDRAM structure throughout the CMP process were characterized in detailed. Comparision made among the newly proposed scheme and the conventional processes such as Direct Polish (DP) Scheme and the Reverse Mask (RT) Scheme were also presented. Master of Engineering 2008-09-17T09:56:34Z 2008-09-17T09:56:34Z 2001 2001 Thesis http://hdl.handle.net/10356/4685 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Lim, Victor Seng Keong.
Advanced planarization techniques for deep sub-micron applications
description In this work, the evolution of step height, film thickness and unformity, on both the STI test structures and SDRAM structure throughout the CMP process were characterized in detailed. Comparision made among the newly proposed scheme and the conventional processes such as Direct Polish (DP) Scheme and the Reverse Mask (RT) Scheme were also presented.
author2 Goh, Wang Ling
author_facet Goh, Wang Ling
Lim, Victor Seng Keong.
format Theses and Dissertations
author Lim, Victor Seng Keong.
author_sort Lim, Victor Seng Keong.
title Advanced planarization techniques for deep sub-micron applications
title_short Advanced planarization techniques for deep sub-micron applications
title_full Advanced planarization techniques for deep sub-micron applications
title_fullStr Advanced planarization techniques for deep sub-micron applications
title_full_unstemmed Advanced planarization techniques for deep sub-micron applications
title_sort advanced planarization techniques for deep sub-micron applications
publishDate 2008
url http://hdl.handle.net/10356/4685
_version_ 1772825441515601920

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