Growth and characterization of GaAs-based III-V-N material for p-i-n photodectectors using antimony as a surfactant

169 p.

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Bibliographic Details
Main Author:	Cheah, Weng Kwong
Other Authors:	Fan Weijun
Format:	Theses and Dissertations
Published:	2011
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Online Access:	https://hdl.handle.net/10356/46872
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Institution:	Nanyang Technological University

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spelling	sg-ntu-dr.10356-468722023-07-04T17:07:43Z Growth and characterization of GaAs-based III-V-N material for p-i-n photodectectors using antimony as a surfactant Cheah, Weng Kwong Fan Weijun School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics 169 p. The work present in this thesis was initiated by the desire to design and fabricate a GaAs-based InGaAsN p-i-n photodetector operating at 1.3 µm, using solid source molecular beam epitaxy. III-V dilute nitrides such as the quaternary InGaAsN has attracted much attention due to its potential in optoelectronic device applications operating at the 1.3 and 1.55 µm wavelengths on the GaAs material system. These wavelengths are important for the next generation long-wavelength optical fiber communication systems. The conventional choices of active regions for lasers at these wavelengths are InGaAsP or InGaAs on InP substrates. However, these material systems exhibit poor temperature characteristics due to a shallow conduction band potential as compared to the III-V-N material system. DOCTOR OF PHILOSOPHY (EEE) 2011-12-23T10:03:00Z 2011-12-23T10:03:00Z 2006 2006 Thesis Cheah, W. K. (2006). Growth and characterization of GaAs-based III-V-N material for p-i-n photodectectors using antimony as a surfactant. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/46872 10.32657/10356/46872 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Cheah, Weng Kwong Growth and characterization of GaAs-based III-V-N material for p-i-n photodectectors using antimony as a surfactant
description	169 p.
author2	Fan Weijun
author_facet	Fan Weijun Cheah, Weng Kwong
format	Theses and Dissertations
author	Cheah, Weng Kwong
author_sort	Cheah, Weng Kwong
title	Growth and characterization of GaAs-based III-V-N material for p-i-n photodectectors using antimony as a surfactant
title_short	Growth and characterization of GaAs-based III-V-N material for p-i-n photodectectors using antimony as a surfactant
title_full	Growth and characterization of GaAs-based III-V-N material for p-i-n photodectectors using antimony as a surfactant
title_fullStr	Growth and characterization of GaAs-based III-V-N material for p-i-n photodectectors using antimony as a surfactant
title_full_unstemmed	Growth and characterization of GaAs-based III-V-N material for p-i-n photodectectors using antimony as a surfactant
title_sort	growth and characterization of gaas-based iii-v-n material for p-i-n photodectectors using antimony as a surfactant
publishDate	2011
url	https://hdl.handle.net/10356/46872
_version_	1772826284200558592

Growth and characterization of GaAs-based III-V-N material for p-i-n photodectectors using antimony as a surfactant

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