Studies on gallium arsenide heterojunction bipolar transistors (HBTs) for microwave power applications

117 p.

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Bibliographic Details
Main Author:	Neo, Wah Peng
Other Authors:	Wang Hong
Format:	Theses and Dissertations
Published:	2011
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:	https://hdl.handle.net/10356/46912
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Institution:	Nanyang Technological University

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spelling	sg-ntu-dr.10356-469122023-07-04T16:17:34Z Studies on gallium arsenide heterojunction bipolar transistors (HBTs) for microwave power applications Neo, Wah Peng Wang Hong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits 117 p. In this work, high performance GaAs-based power HBT technology is developed. The devices fabricated on un-thinned GaAs substrate demonstrate a power density of 5 W/mm at 10 GHz. This is comparable to the state of the art of GaAs power HBTs using complicated substrate thinning and via whole processes. DOCTOR OF PHILOSOPHY (EEE) 2011-12-27T05:44:22Z 2011-12-27T05:44:22Z 2006 2006 Thesis Neo, W. P. (2006). Studies on gallium arsenide heterojunction bipolar transistors (HBTs) for microwave power applications. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/46912 10.32657/10356/46912 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Neo, Wah Peng Studies on gallium arsenide heterojunction bipolar transistors (HBTs) for microwave power applications
description	117 p.
author2	Wang Hong
author_facet	Wang Hong Neo, Wah Peng
format	Theses and Dissertations
author	Neo, Wah Peng
author_sort	Neo, Wah Peng
title	Studies on gallium arsenide heterojunction bipolar transistors (HBTs) for microwave power applications
title_short	Studies on gallium arsenide heterojunction bipolar transistors (HBTs) for microwave power applications
title_full	Studies on gallium arsenide heterojunction bipolar transistors (HBTs) for microwave power applications
title_fullStr	Studies on gallium arsenide heterojunction bipolar transistors (HBTs) for microwave power applications
title_full_unstemmed	Studies on gallium arsenide heterojunction bipolar transistors (HBTs) for microwave power applications
title_sort	studies on gallium arsenide heterojunction bipolar transistors (hbts) for microwave power applications
publishDate	2011
url	https://hdl.handle.net/10356/46912
_version_	1772827390645370880

Studies on gallium arsenide heterojunction bipolar transistors (HBTs) for microwave power applications

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