Wafer-level isothermal electromigration study on deep sub-micron interconnect metallization

The main focus is to further develop the accelerated wafer-level ISO-J and IOS-T EM tests with the possibility of incorporation into wafer fabrication for rapid EM evaluation of new interconnect metallization.

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Bibliographic Details
Main Author: Lim, Yeow Kheng.
Other Authors: Goh, Wang Ling
Format: Theses and Dissertations
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/4698
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Institution: Nanyang Technological University
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