Wafer-level isothermal electromigration study on deep sub-micron interconnect metallization
The main focus is to further develop the accelerated wafer-level ISO-J and IOS-T EM tests with the possibility of incorporation into wafer fabrication for rapid EM evaluation of new interconnect metallization.
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/4698 |
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| Institution: | Nanyang Technological University |