Self-aligned dual damascene processing technique to improve copper interconnect performance

Improving the process and reliability of copper via-line metallization using a proposed novel self-aligned dual damascene approach for the 0.13 urn technology generation. Collective process issues when implementing industrial primary DD approaches led to the invention of the DD approach.

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Bibliographic Details
Main Author: Neo, Chin Chuan
Other Authors: Goh, Wang Ling
Format: Theses and Dissertations
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/4931
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Institution: Nanyang Technological University
Description
Summary:Improving the process and reliability of copper via-line metallization using a proposed novel self-aligned dual damascene approach for the 0.13 urn technology generation. Collective process issues when implementing industrial primary DD approaches led to the invention of the DD approach.