Self-aligned dual damascene processing technique to improve copper interconnect performance

• Main Author: Neo, Chin Chuan
• Other Authors: Goh, Wang Ling
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: http://hdl.handle.net/10356/4931
• Institution: Nanyang Technological University

Improving the process and reliability of copper via-line metallization using a proposed novel self-aligned dual damascene approach for the 0.13 urn technology generation. Collective process issues when implementing industrial primary DD approaches led to the invention of the DD approach.