Electron cyclotron resonance (ECR) plasma etching study of GaAs and GaInP

Electron cyclotron resonance (ECR) plasma etching study of GaAs and GaInP

This thesis presents the Electron Cyclotron Resonance (ECR) plasma etching of GaAs and Ga(0.52)In(0.48)P grown using Solid Source Molecular Beam Epitaxy (SSMBE) with a view of applying the process for future heterojunction bipolar transistors (HBTs) fabrication.

Saved in:
Bibliographic Details
Main Author: Ng, Tien Khee.
Other Authors: Yoon, Soon Fatt
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Online Access:http://hdl.handle.net/10356/4964
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Description
Summary:This thesis presents the Electron Cyclotron Resonance (ECR) plasma etching of GaAs and Ga(0.52)In(0.48)P grown using Solid Source Molecular Beam Epitaxy (SSMBE) with a view of applying the process for future heterojunction bipolar transistors (HBTs) fabrication.

Similar Items