Electron cyclotron resonance (ECR) plasma etching study of GaAs and GaInP

• Main Author: Ng, Tien Khee.
• Other Authors: Yoon, Soon Fatt
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
• Online Access: http://hdl.handle.net/10356/4964
• Institution: Nanyang Technological University

This thesis presents the Electron Cyclotron Resonance (ECR) plasma etching of GaAs and Ga(0.52)In(0.48)P grown using Solid Source Molecular Beam Epitaxy (SSMBE) with a view of applying the process for future heterojunction bipolar transistors (HBTs) fabrication.