Electron cyclotron resonance (ECR) plasma etching study of GaAs and GaInP

This thesis presents the Electron Cyclotron Resonance (ECR) plasma etching of GaAs and Ga(0.52)In(0.48)P grown using Solid Source Molecular Beam Epitaxy (SSMBE) with a view of applying the process for future heterojunction bipolar transistors (HBTs) fabrication.

Saved in:
Bibliographic Details
Main Author: Ng, Tien Khee.
Other Authors: Yoon, Soon Fatt
Format: Theses and Dissertations
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/4964
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
id sg-ntu-dr.10356-4964
record_format dspace
spelling sg-ntu-dr.10356-49642023-07-04T15:45:37Z Electron cyclotron resonance (ECR) plasma etching study of GaAs and GaInP Ng, Tien Khee. Yoon, Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials This thesis presents the Electron Cyclotron Resonance (ECR) plasma etching of GaAs and Ga(0.52)In(0.48)P grown using Solid Source Molecular Beam Epitaxy (SSMBE) with a view of applying the process for future heterojunction bipolar transistors (HBTs) fabrication. Master of Engineering 2008-09-17T10:02:20Z 2008-09-17T10:02:20Z 2001 2001 Thesis http://hdl.handle.net/10356/4964 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Ng, Tien Khee.
Electron cyclotron resonance (ECR) plasma etching study of GaAs and GaInP
description This thesis presents the Electron Cyclotron Resonance (ECR) plasma etching of GaAs and Ga(0.52)In(0.48)P grown using Solid Source Molecular Beam Epitaxy (SSMBE) with a view of applying the process for future heterojunction bipolar transistors (HBTs) fabrication.
author2 Yoon, Soon Fatt
author_facet Yoon, Soon Fatt
Ng, Tien Khee.
format Theses and Dissertations
author Ng, Tien Khee.
author_sort Ng, Tien Khee.
title Electron cyclotron resonance (ECR) plasma etching study of GaAs and GaInP
title_short Electron cyclotron resonance (ECR) plasma etching study of GaAs and GaInP
title_full Electron cyclotron resonance (ECR) plasma etching study of GaAs and GaInP
title_fullStr Electron cyclotron resonance (ECR) plasma etching study of GaAs and GaInP
title_full_unstemmed Electron cyclotron resonance (ECR) plasma etching study of GaAs and GaInP
title_sort electron cyclotron resonance (ecr) plasma etching study of gaas and gainp
publishDate 2008
url http://hdl.handle.net/10356/4964
_version_ 1772828754083577856