Deposition, characterization, and device fabrication of GaN and AlN based thin film materials

With the wide appealing application of GaN in electronic and optoelectronic device, many researchers had come out with innovative ways of preventing the cracks and reduction of strain at the interface. This is due to the different in CTE and approximately 16.9% lattice mismatch between GaN and Si su...

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Main Author:	Ashraf Uddin.
Other Authors:	School of Materials Science & Engineering
Format:	Research Report
Published:	2008
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:	http://hdl.handle.net/10356/5027
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-5027
record_format	dspace
spelling	sg-ntu-dr.10356-50272023-07-08T06:39:39Z Deposition, characterization, and device fabrication of GaN and AlN based thin film materials Ashraf Uddin. School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films With the wide appealing application of GaN in electronic and optoelectronic device, many researchers had come out with innovative ways of preventing the cracks and reduction of strain at the interface. This is due to the different in CTE and approximately 16.9% lattice mismatch between GaN and Si substrate. One of the most common and effective method was through the insertion of AlN as an inter-layer buffer material. This was adopted during the sample preparation stage. Cracks were not seen on any GaN film of the samples which is a good start for the possible application in future. 2008-09-17T10:04:47Z 2008-09-17T10:04:47Z 2006 2006 Research Report http://hdl.handle.net/10356/5027 Nanyang Technological University 274 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
spellingShingle	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Ashraf Uddin. Deposition, characterization, and device fabrication of GaN and AlN based thin film materials
description	With the wide appealing application of GaN in electronic and optoelectronic device, many researchers had come out with innovative ways of preventing the cracks and reduction of strain at the interface. This is due to the different in CTE and approximately 16.9% lattice mismatch between GaN and Si substrate. One of the most common and effective method was through the insertion of AlN as an inter-layer buffer material. This was adopted during the sample preparation stage. Cracks were not seen on any GaN film of the samples which is a good start for the possible application in future.
author2	School of Materials Science & Engineering
author_facet	School of Materials Science & Engineering Ashraf Uddin.
format	Research Report
author	Ashraf Uddin.
author_sort	Ashraf Uddin.
title	Deposition, characterization, and device fabrication of GaN and AlN based thin film materials
title_short	Deposition, characterization, and device fabrication of GaN and AlN based thin film materials
title_full	Deposition, characterization, and device fabrication of GaN and AlN based thin film materials
title_fullStr	Deposition, characterization, and device fabrication of GaN and AlN based thin film materials
title_full_unstemmed	Deposition, characterization, and device fabrication of GaN and AlN based thin film materials
title_sort	deposition, characterization, and device fabrication of gan and aln based thin film materials
publishDate	2008
url	http://hdl.handle.net/10356/5027
_version_	1772827334661898240

Deposition, characterization, and device fabrication of GaN and AlN based thin film materials

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