Deposition, characterization, and device fabrication of GaN and AlN based thin film materials

• 主要作者: Ashraf Uddin.
• 其他作者: School of Materials Science & Engineering
• 格式: Research Report
• 出版: 2008
• 主題: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• 在線閱讀: http://hdl.handle.net/10356/5027
• 機構: Nanyang Technological University

With the wide appealing application of GaN in electronic and optoelectronic device, many researchers had come out with innovative ways of preventing the cracks and reduction of strain at the interface. This is due to the different in CTE and approximately 16.9% lattice mismatch between GaN and Si su...