Back-end-of-line process reliability of advanced semiconductor technology
The main objectives of this project are (1) to establish new test procedures for accurate wafer-level characterization of Cu electromigration behavior and low-k dielectric materials, (2) to measure the wafer-level Cu electromigration characteristics and explain them in terms of microstructural chang...
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格式: | Research Report |
語言: | English |
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2008
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在線閱讀: | http://hdl.handle.net/10356/5036 |
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