Application of chemical mechanical polishing for sub-micron semiconductor device fabrication
This project investigated the process parameters, polishing consumables and pattern density dependencies in shallow trench isolation process performance.
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2008
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Online Access: | http://hdl.handle.net/10356/5050 |
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sg-ntu-dr.10356-50502020-06-01T11:56:47Z Application of chemical mechanical polishing for sub-micron semiconductor device fabrication Goh, Hua Kooi. Higelin, Gerald School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials This project investigated the process parameters, polishing consumables and pattern density dependencies in shallow trench isolation process performance. Master of Applied Science 2008-09-17T10:18:27Z 2008-09-17T10:18:27Z 2001 2001 Thesis http://hdl.handle.net/10356/5050 en Nanyang Technological University 149 p. application/pdf |
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DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Goh, Hua Kooi. Application of chemical mechanical polishing for sub-micron semiconductor device fabrication |
description |
This project investigated the process parameters, polishing consumables and pattern density dependencies in shallow trench isolation process performance. |
author2 |
Higelin, Gerald |
author_facet |
Higelin, Gerald Goh, Hua Kooi. |
format |
Theses and Dissertations |
author |
Goh, Hua Kooi. |
author_sort |
Goh, Hua Kooi. |
title |
Application of chemical mechanical polishing for sub-micron semiconductor device fabrication |
title_short |
Application of chemical mechanical polishing for sub-micron semiconductor device fabrication |
title_full |
Application of chemical mechanical polishing for sub-micron semiconductor device fabrication |
title_fullStr |
Application of chemical mechanical polishing for sub-micron semiconductor device fabrication |
title_full_unstemmed |
Application of chemical mechanical polishing for sub-micron semiconductor device fabrication |
title_sort |
application of chemical mechanical polishing for sub-micron semiconductor device fabrication |
publishDate |
2008 |
url |
http://hdl.handle.net/10356/5050 |
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1681058779058143232 |