Selective emitters prepared by high density plasma immersion ion implantation (HD-PIII) in silicon wafer based solar cell

• Main Author: Seow, Leslie Kai Tong.
• Other Authors: Sun Changqing
• Format: Final Year Project
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/53370
• Institution: Nanyang Technological University

Plasma Ion Immersion Implantation is a rapidly developing modification technique used for doping the near-surface regions of materials by implanting energetic ions from plasma, which will surround the sample in the vacuum chamber. This technique is widely known for its accuracy for dopant concentration and junction depth at implanted regions, and its cost saving properties. For this project, the author places the focus on selective emitter photovoltaic cells that are produced by High Density-Plasma Ion Immersion Implantation technique. Experimental exercises are conducted mainly on Nitrogen and Phosphine gas, as the implantation agent. In this Final Year Project (FYP) report, the author details his personal experiences and achievements over the duration of his project stint. This report discusses examples of different types of wafers and their interactions with the Nitrogen and Phosphine gas on the selective emitter platform. Trending and approximate results are collected from SunVoc system, where KITE interface provides an accurate review on the resulting Voc. Observations recorded that Voc of cells improved from 5% to 9% by transition of emitter pattern and shallow emitter doping conditions. The experiments showed that the maximum improvement on the Voc readings can hit up to 9.4%.