Selective emitters prepared by high density plasma immersion ion implantation (HD-PIII) in silicon wafer based solar cell
Plasma Ion Immersion Implantation is a rapidly developing modification technique used for doping the near-surface regions of materials by implanting energetic ions from plasma, which will surround the sample in the vacuum chamber. This technique is widely known for its accuracy for dopant concentrat...
Saved in:
Main Author: | Seow, Leslie Kai Tong. |
---|---|
Other Authors: | Sun Changqing |
Format: | Final Year Project |
Language: | English |
Published: |
2013
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/53370 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Defects of thin films on silicon wafer
by: Tang, Shiau Khee.
Published: (2008) -
Plasma immersion ion implantation on polymers
by: Sze, Jia Yin
Published: (2010) -
Study of plasma etching of silicon carbide
by: Xia, Jinghua
Published: (2010) -
Novel selective emitter process using non-acidic etch-back for inline-diffused silicon wafer solar cells
by: Basu, P.K., et al.
Published: (2016) -
Study of low temperature plasma activated wafer bonding
by: Yeo, Thomas Peng Siong.
Published: (2013)