Selective emitters prepared by high density plasma immersion ion implantation (HD-PIII) in silicon wafer based solar cell

• المؤلف الرئيسي: Seow, Leslie Kai Tong.
• مؤلفون آخرون: Sun Changqing
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/53370

Plasma Ion Immersion Implantation is a rapidly developing modification technique used for doping the near-surface regions of materials by implanting energetic ions from plasma, which will surround the sample in the vacuum chamber. This technique is widely known for its accuracy for dopant concentrat...