Selective emitters prepared by high density plasma immersion ion implantation (HD-PIII) in silicon wafer based solar cell
Plasma Ion Immersion Implantation is a rapidly developing modification technique used for doping the near-surface regions of materials by implanting energetic ions from plasma, which will surround the sample in the vacuum chamber. This technique is widely known for its accuracy for dopant concentrat...
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格式: | Final Year Project |
語言: | English |
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2013
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在線閱讀: | http://hdl.handle.net/10356/53370 |
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