Transition metal oxide-based resistive switching memory for high density non-volatile memory

• Main Author: Ng, Hui Ting.
• Other Authors: Zhu Weiguang
• Format: Final Year Project
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering
• Online Access: http://hdl.handle.net/10356/54422
• Institution: Nanyang Technological University

There is always a consistent increasing demand in the market for a flash memory that is more scalable in term of size and has a higher performance in term of speed, storage capacity, Non-Volatile Memory (NVM), low power consumption and durable when comes to data storing. However, short channel effects, cross-talks between cells, lithography and other challenges arise when comes to fabricating the scaled down traditional non-volatile FLASH memory. Recently, Oxide Based Resistive Random Access Memory (OxRRAM) has attracted attentions of researchers as it sustains superior performance and is CMOS technology compatible. With regards to RRAM self-rectifying I-V characteristics, the unnecessary cross-bar architecture current path is avoided which in term allows scaling in device size via cross-bar formation. Therefore, memory cell can be scaled down to 4F2 dimensions. In this project, development of high quality metal oxide with appropriate metal electrodes for unipolar Resistive Random Access Memory (RRAM) application due to the challenges faced when scaling down the device. Investigation on the performance of HfOx based unipolar RRAM will be carry out via performing electrical characterizations on device switching, stability, uniformity, reproducibility, retention, endurance and lifetime prediction. This report will focus on the observations and discussions on the various electrical characterizations results collected and the implications on moving towards commercialization.