Transition metal oxide-based resistive switching memory for high density non-volatile memory

• Main Author: Ng, Hui Ting.
• Other Authors: Zhu Weiguang
• Format: Final Year Project
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering
• Online Access: http://hdl.handle.net/10356/54422
• Institution: Nanyang Technological University

There is always a consistent increasing demand in the market for a flash memory that is more scalable in term of size and has a higher performance in term of speed, storage capacity, Non-Volatile Memory (NVM), low power consumption and durable when comes to data storing. However, short channel effec...