Transition metal oxide-based resistive switching memory for high density non-volatile memory
There is always a consistent increasing demand in the market for a flash memory that is more scalable in term of size and has a higher performance in term of speed, storage capacity, Non-Volatile Memory (NVM), low power consumption and durable when comes to data storing. However, short channel effec...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2013
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| Online Access: | http://hdl.handle.net/10356/54422 |
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| Institution: | Nanyang Technological University |
| Language: | English |