Digital breakdown and switching behaviours in high-K dielectrics in nano-scale mosfets

• Main Author: Liu, Wenhu.
• Other Authors: Tan Chuan Seng
• Format: Theses and Dissertations
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/54598
• Institution: Nanyang Technological University

It has been reported that the breakdown (BD) mode in ultra-thin gate dielectrics exhibits progressive BD after soft BD (SBD) instead of abrupt hard BD (HBD) commonly observed in thick dielectrics. Furthermore, the first SBD event in ultra-thin dielectrics does not necessarily lead to complete device...