Growth of gallium nitride nanowires by low pressure chemical vapor deposition (LPCVD)

Group-III nitrides such as gallium nitride (GaN) have been intensively used for high power electronic, optoelectronic, RF power and sensor applications such as blue light emitting diodes (LEDs), high power and high voltage transistors, etc. In recent years, nanowires have gained interest due to the...

Full description

Saved in:
Bibliographic Details
Main Author: Wang, Jianbo
Other Authors: Wang Hong
Format: Theses and Dissertations
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/54694
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English