Growth of gallium nitride nanowires by low pressure chemical vapor deposition (LPCVD)

• المؤلف الرئيسي: Wang, Jianbo
• مؤلفون آخرون: Wang Hong
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/54694
• المؤسسة: Nanyang Technological University

Group-III nitrides such as gallium nitride (GaN) have been intensively used for high power electronic, optoelectronic, RF power and sensor applications such as blue light emitting diodes (LEDs), high power and high voltage transistors, etc. In recent years, nanowires have gained interest due to the...