Growth of gallium nitride nanowires by low pressure chemical vapor deposition (LPCVD)
Group-III nitrides such as gallium nitride (GaN) have been intensively used for high power electronic, optoelectronic, RF power and sensor applications such as blue light emitting diodes (LEDs), high power and high voltage transistors, etc. In recent years, nanowires have gained interest due to the...
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| 格式: | Theses and Dissertations |
| 語言: | English |
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2013
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| 在線閱讀: | https://hdl.handle.net/10356/54694 |
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| 機構: | Nanyang Technological University |
| 語言: | English |