Dynamic bias-temperature instability study of metal/high-K gate stacks

In summary, a systematic study on the dynamic BTI of the metal/high-k gate stacks is conducted. The evolution of the switching oxide traps under the NBT and PBT stressing are compared and the possible oxygen defect framework is proposed. The frequency dependence of the BTI recovery is also examin...

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Main Author: Gao, Yuan
Other Authors: Ang Diing Shenp
Format: Theses and Dissertations
Language:English
Published: 2014
Subjects:
Online Access:http://hdl.handle.net/10356/55583
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-555832023-07-04T15:35:48Z Dynamic bias-temperature instability study of metal/high-K gate stacks Gao, Yuan Ang Diing Shenp School of Electrical and Electronic Engineering DRNTU::Engineering In summary, a systematic study on the dynamic BTI of the metal/high-k gate stacks is conducted. The evolution of the switching oxide traps under the NBT and PBT stressing are compared and the possible oxygen defect framework is proposed. The frequency dependence of the BTI recovery is also examined. Implications of these new experimental observations on the device reliability assessment and modeling are discussed. Doctor of Philosophy (EEE) 2014-03-17T11:18:11Z 2014-03-17T11:18:11Z 2014 2014 Thesis Gao, Y. (2014). Dynamic bias-temperature instability study of metal/high-K gate stacks. Doctoral thesis, Nanyang Technological University, Singapore. http://hdl.handle.net/10356/55583 en 204 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering
spellingShingle DRNTU::Engineering
Gao, Yuan
Dynamic bias-temperature instability study of metal/high-K gate stacks
description In summary, a systematic study on the dynamic BTI of the metal/high-k gate stacks is conducted. The evolution of the switching oxide traps under the NBT and PBT stressing are compared and the possible oxygen defect framework is proposed. The frequency dependence of the BTI recovery is also examined. Implications of these new experimental observations on the device reliability assessment and modeling are discussed.
author2 Ang Diing Shenp
author_facet Ang Diing Shenp
Gao, Yuan
format Theses and Dissertations
author Gao, Yuan
author_sort Gao, Yuan
title Dynamic bias-temperature instability study of metal/high-K gate stacks
title_short Dynamic bias-temperature instability study of metal/high-K gate stacks
title_full Dynamic bias-temperature instability study of metal/high-K gate stacks
title_fullStr Dynamic bias-temperature instability study of metal/high-K gate stacks
title_full_unstemmed Dynamic bias-temperature instability study of metal/high-K gate stacks
title_sort dynamic bias-temperature instability study of metal/high-k gate stacks
publishDate 2014
url http://hdl.handle.net/10356/55583
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