Fabrication and characterization of two-terminal graphene resistive memories

Fabrication and characterization of two-terminal graphene resistive memories

In the recent years, graphene-based atomic switches joined the non-volatile memory race. Many teams reported graphene-based or graphite-based switches atomic switches. The breakdown phenomenon of graphene nano-ribbons or graphene sheets were also studied by many groups to analyse the carbon-based in...

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書目詳細資料
主要作者:	Yi, Xiang
其他作者:	Tay Beng Kang
格式:	Final Year Project
語言:	English
出版:	2014
主題:	DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
在線閱讀:	http://hdl.handle.net/10356/60386
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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