Low temperature InP (chip) / Al2O3 / Si (wafer) direct bonding

Direct chip-to-wafer bonding of Indium Phosphide (InP) on Silicon (Si) using Aluminium Oxide (Al2O3) as an intermediate layer has been investigated. Thermal superiority of Al2O3 material over SiO2 as bonding intermediate layer has been demonstrated with respect to thermal dissipation and thermally-i...

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Main Author: Lin, Yiding
Other Authors: Tan Chuan Seng
Format: Theses and Dissertations
Language:English
Published: 2015
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Online Access:http://hdl.handle.net/10356/65369
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-653692023-07-04T16:15:44Z Low temperature InP (chip) / Al2O3 / Si (wafer) direct bonding Lin, Yiding Tan Chuan Seng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Direct chip-to-wafer bonding of Indium Phosphide (InP) on Silicon (Si) using Aluminium Oxide (Al2O3) as an intermediate layer has been investigated. Thermal superiority of Al2O3 material over SiO2 as bonding intermediate layer has been demonstrated with respect to thermal dissipation and thermally-induced stress relief, using COMSOL Multiphysics. Successful InP/Al2O3/Si bonding has been achieved, via both O2 plasma and UV/Ozone activation techniques. Multiple characterization results support the good quality of bonding. Die shear test shows strong bond strength higher than 2.5 MPa. Cross-sectional Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) results reveal void-free and seamless bonding interface. Energy-dispersive X-ray Spectroscopy (EDX) as well as elemental mapping results show minimal material inter-diffusion at the interface. X-Ray Diffractometer (XRD) scan confirms minimal stress induced in the transferred film without significant crystal quality degradation. To resolve bonding interfacial void issue, in-plane outgassing channels on Si were designed, fabricated and studied. COMSOL simulation shows more significant outgassing-channel-induced InP/Al2O3/Si thermal and thermal-mechanical characteristics degradation, with decreasing channel Spacing-to-width (S/W) ratio. Successful InP/Al2O3/channel-patterned-Si bonding has been demonstrated, with void density suppression more significantly with decreasing S/W ratio. To compromise between the thermally-induced degradation and void density suppression, optimal S/W ratio of 2.5 has been proposed, with mild (10%) thermal stress increase and efficient (90%) void density suppression. Uniform InP film coverage was observed on Si at this ratio, with rigid suspension above outgassing channels. Therefore, the overall advantages of InP/Al2O3/Si bonding prove that it could be a promising candidate for future silicon photonics integrated circuit applications. Master of Engineering 2015-09-02T01:14:27Z 2015-09-02T01:14:27Z 2015 2015 Thesis Lin, Y. (2015). Low temperature InP (chip) / Al2O3 / Si (wafer) direct bonding. Master's thesis, Nanyang Technological University, Singapore. http://hdl.handle.net/10356/65369 en 104 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Lin, Yiding
Low temperature InP (chip) / Al2O3 / Si (wafer) direct bonding
description Direct chip-to-wafer bonding of Indium Phosphide (InP) on Silicon (Si) using Aluminium Oxide (Al2O3) as an intermediate layer has been investigated. Thermal superiority of Al2O3 material over SiO2 as bonding intermediate layer has been demonstrated with respect to thermal dissipation and thermally-induced stress relief, using COMSOL Multiphysics. Successful InP/Al2O3/Si bonding has been achieved, via both O2 plasma and UV/Ozone activation techniques. Multiple characterization results support the good quality of bonding. Die shear test shows strong bond strength higher than 2.5 MPa. Cross-sectional Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) results reveal void-free and seamless bonding interface. Energy-dispersive X-ray Spectroscopy (EDX) as well as elemental mapping results show minimal material inter-diffusion at the interface. X-Ray Diffractometer (XRD) scan confirms minimal stress induced in the transferred film without significant crystal quality degradation. To resolve bonding interfacial void issue, in-plane outgassing channels on Si were designed, fabricated and studied. COMSOL simulation shows more significant outgassing-channel-induced InP/Al2O3/Si thermal and thermal-mechanical characteristics degradation, with decreasing channel Spacing-to-width (S/W) ratio. Successful InP/Al2O3/channel-patterned-Si bonding has been demonstrated, with void density suppression more significantly with decreasing S/W ratio. To compromise between the thermally-induced degradation and void density suppression, optimal S/W ratio of 2.5 has been proposed, with mild (10%) thermal stress increase and efficient (90%) void density suppression. Uniform InP film coverage was observed on Si at this ratio, with rigid suspension above outgassing channels. Therefore, the overall advantages of InP/Al2O3/Si bonding prove that it could be a promising candidate for future silicon photonics integrated circuit applications.
author2 Tan Chuan Seng
author_facet Tan Chuan Seng
Lin, Yiding
format Theses and Dissertations
author Lin, Yiding
author_sort Lin, Yiding
title Low temperature InP (chip) / Al2O3 / Si (wafer) direct bonding
title_short Low temperature InP (chip) / Al2O3 / Si (wafer) direct bonding
title_full Low temperature InP (chip) / Al2O3 / Si (wafer) direct bonding
title_fullStr Low temperature InP (chip) / Al2O3 / Si (wafer) direct bonding
title_full_unstemmed Low temperature InP (chip) / Al2O3 / Si (wafer) direct bonding
title_sort low temperature inp (chip) / al2o3 / si (wafer) direct bonding
publishDate 2015
url http://hdl.handle.net/10356/65369
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