Low temperature InP (chip) / Al2O3 / Si (wafer) direct bonding

Direct chip-to-wafer bonding of Indium Phosphide (InP) on Silicon (Si) using Aluminium Oxide (Al2O3) as an intermediate layer has been investigated. Thermal superiority of Al2O3 material over SiO2 as bonding intermediate layer has been demonstrated with respect to thermal dissipation and thermally-i...

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Bibliographic Details
Main Author: Lin, Yiding
Other Authors: Tan Chuan Seng
Format: Theses and Dissertations
Language:English
Published: 2015
Subjects:
Online Access:http://hdl.handle.net/10356/65369
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Institution: Nanyang Technological University
Language: English

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