Fabrication and characterization of oxide-based resistive random access memory
Memory technologies have been gaining significant advancements in the infrastructure over the years. Factors that are seriously considered are high scalability, excellent and fast speed in operations, long retention ability, optimal endurance, energy-saving mode and the ease in integrating into a...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2016
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| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/67404 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Memory technologies have been gaining significant advancements in the infrastructure over the
years. Factors that are seriously considered are high scalability, excellent and fast speed in
operations, long retention ability, optimal endurance, energy-saving mode and the ease in
integrating into a macro scale memory setup. With such factors into place, Resistive Random Access
Memory (ReRAM) is one of such promising Non-Volatile Memory which tries to satisfy most of the
factors as stated above. In this work, fabrication and characterization of oxide-based ReRAM would
be the study. In specific, Magnesium Oxide (MgO) would be the main Oxide used, as it has been one
of the most preferred compounds used for other similar study of MOS, MTJ and spin applications.
Several factors for this choice are taken into consideration. Firstly a high breakdown field and a
relatively good thermal conductivity, large band gap, and a good level of dielectric constant. It also
has a low formation of interfacial layers, which is optimal for element disposition. Such attributes of
MgO provide a good base to work with, in order to minimize, if not avoid, leakage currents during
application of such a memory device. However there are also drawbacks to using MgO as oxide.
They consume relatively high energy due to a high operating voltage. Such factors is taken into
consideration in this work, with steps taken such as to deposit elements onto the devices to improve
the device. The performance is then studied, with specific focus on its High and Low Resistance
States. It is then discovered that much can be done to improve the performance of such devices,
through more advanced techniques of characterization. |
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