Fabrication and characterization of oxide-based resistive random access memory

• المؤلف الرئيسي: Mohamed Hamzah Mohamed Abdul Kadir
• مؤلفون آخرون: Lew Wen Siang
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2016
• الموضوعات: DRNTU::Science
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/67404
• المؤسسة: Nanyang Technological University

Memory technologies have been gaining significant advancements in the infrastructure over the years. Factors that are seriously considered are high scalability, excellent and fast speed in operations, long retention ability, optimal endurance, energy-saving mode and the ease in integrating into a...