Fabrication and characterization of oxide-based resistive random access memory
Memory technologies have been gaining significant advancements in the infrastructure over the years. Factors that are seriously considered are high scalability, excellent and fast speed in operations, long retention ability, optimal endurance, energy-saving mode and the ease in integrating into a...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2016
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| Online Access: | http://hdl.handle.net/10356/67404 |
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| Institution: | Nanyang Technological University |
| Language: | English |