Fabrication and characterization of oxide-based resistive random access memory
Memory technologies have been gaining significant advancements in the infrastructure over the years. Factors that are seriously considered are high scalability, excellent and fast speed in operations, long retention ability, optimal endurance, energy-saving mode and the ease in integrating into a...
Saved in:
| 主要作者: | |
|---|---|
| 其他作者: | |
| 格式: | Final Year Project |
| 語言: | English |
| 出版: |
2016
|
| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/67404 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
| 機構: | Nanyang Technological University |
| 語言: | English |