Simulation and characterization of the process and circuit of the MOSFET device with ISRC structure

The main objectives of this project are examining and elucidating unique features of Ultra thin film MOSFET by TCAD tools and providing useful understanding and data that could be used in MOS device and circuit design and optimization for high performance, low voltage/power ICes.

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Bibliographic Details
Main Author:	Lee, Yong Kuen.
Other Authors:	School of Materials Science & Engineering
Format:	Research Report
Published:	2008
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:	http://hdl.handle.net/10356/6785
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-6785
record_format	dspace
spelling	sg-ntu-dr.10356-67852020-05-29T04:56:30Z Simulation and characterization of the process and circuit of the MOSFET device with ISRC structure Lee, Yong Kuen. School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films The main objectives of this project are examining and elucidating unique features of Ultra thin film MOSFET by TCAD tools and providing useful understanding and data that could be used in MOS device and circuit design and optimization for high performance, low voltage/power ICes. RG 6/98 2008-09-17T14:24:50Z 2008-09-17T14:24:50Z 2001 2001 Research Report http://hdl.handle.net/10356/6785 Nanyang Technological University 98 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
topic	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
spellingShingle	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Lee, Yong Kuen. Simulation and characterization of the process and circuit of the MOSFET device with ISRC structure
description	The main objectives of this project are examining and elucidating unique features of Ultra thin film MOSFET by TCAD tools and providing useful understanding and data that could be used in MOS device and circuit design and optimization for high performance, low voltage/power ICes.
author2	School of Materials Science & Engineering
author_facet	School of Materials Science & Engineering Lee, Yong Kuen.
format	Research Report
author	Lee, Yong Kuen.
author_sort	Lee, Yong Kuen.
title	Simulation and characterization of the process and circuit of the MOSFET device with ISRC structure
title_short	Simulation and characterization of the process and circuit of the MOSFET device with ISRC structure
title_full	Simulation and characterization of the process and circuit of the MOSFET device with ISRC structure
title_fullStr	Simulation and characterization of the process and circuit of the MOSFET device with ISRC structure
title_full_unstemmed	Simulation and characterization of the process and circuit of the MOSFET device with ISRC structure
title_sort	simulation and characterization of the process and circuit of the mosfet device with isrc structure
publishDate	2008
url	http://hdl.handle.net/10356/6785
_version_	1681056280490278912

Simulation and characterization of the process and circuit of the MOSFET device with ISRC structure

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