Simulation and characterization of the process and circuit of the MOSFET device with ISRC structure
The main objectives of this project are examining and elucidating unique features of Ultra thin film MOSFET by TCAD tools and providing useful understanding and data that could be used in MOS device and circuit design and optimization for high performance, low voltage/power ICes.
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| Format: | Research Report |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/6785 |
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| Institution: | Nanyang Technological University |