Simulation and characterization of the process and circuit of the MOSFET device with ISRC structure

• Main Author: Lee, Yong Kuen.
• Other Authors: School of Materials Science & Engineering
• Format: Research Report
• Published: 2008
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• Online Access: http://hdl.handle.net/10356/6785
• Institution: Nanyang Technological University

The main objectives of this project are examining and elucidating unique features of Ultra thin film MOSFET by TCAD tools and providing useful understanding and data that could be used in MOS device and circuit design and optimization for high performance, low voltage/power ICes.