Compact modeling of high voltage transistors
Double-diffused Metal Oxide Semiconductor (DMOS) transistors are widely used in silicon based High-Voltage (HV) and Radio Frequency (RF) integrated circuits. Conceptually, the device can be viewed as a series connection of conventional MOSFET and a lightly doped drift resistor. High voltage effects...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2016
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| Online Access: | http://hdl.handle.net/10356/69424 |
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| Institution: | Nanyang Technological University |
| Language: | English |