Planar and non-gold metal stacks processes and conduction mechanisms for AlGaN/GaN high-electron-mobility transistors on silicon

• 主要作者: Li, Yang
• 其他作者: Ng Geok Ing
• 格式: Theses and Dissertations
• 語言: English
• 出版: 2017
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: http://hdl.handle.net/10356/72250

AlGaN/GaN high-electron-mobility transistors (HEMTs) have demonstrated great potentials in high voltage and high frequency applications due to the advantage in their intrinsic material properties such as wide band gap, high electron saturation velocity, high sheet carrier density, etc. Conventionall...