A study on complementary resistive switching charateristics in resistive random access memory for next-generation non-volatile memory technology
Resistive random access memory (RRAM) has shown the potential to become the future universal memory. The novel concept of complementary resistive switching (CRS) provides the promise of a high-density, selector-less RRAM crossbar array implementation, free of the sneak-path current problem. CRS beha...
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| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2017
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| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/72896 |
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| 機構: | Nanyang Technological University |
| 語言: | English |
| 總結: | Resistive random access memory (RRAM) has shown the potential to become the future universal memory. The novel concept of complementary resistive switching (CRS) provides the promise of a high-density, selector-less RRAM crossbar array implementation, free of the sneak-path current problem. CRS behavior in HfOx-based RRAM device, using fully compatible materials with current mainstream CMOS technology, was investigated systematically in terms of physical switching mechanism, current conduction mechanism, self-compliance set-switching mechanism, CRS stability, and engineering method to improve CRS voltage window and read margin for the implementation of high-performance RRAM devices with stable and reliable CRS. |
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