A study on complementary resistive switching charateristics in resistive random access memory for next-generation non-volatile memory technology

• 主要作者: Zhang, Haizhong
• 其他作者: Ang Diing Shenp
• 格式: Theses and Dissertations
• 語言: English
• 出版: 2017
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Computer hardware, software and systems
• 在線閱讀: http://hdl.handle.net/10356/72896

Resistive random access memory (RRAM) has shown the potential to become the future universal memory. The novel concept of complementary resistive switching (CRS) provides the promise of a high-density, selector-less RRAM crossbar array implementation, free of the sneak-path current problem. CRS beha...