Strain profile and size dependent electronic band structure of GeSn/SiSn quantum dots for optoelectronic application

We study self-assembled GeSn/SiSn quantum dots for optoelectronic application in the Silicon photonics domain. Valence force field and k.p methods are used to investigate the strain distribution and band structure with size effect.

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Main Authors:	Tan, Chuan Seng, Bose, Sumanta, Fan, W. J., Chen, J., Zhang, D. H.
Other Authors:	School of Electrical and Electronic Engineering
Format:	Conference or Workshop Item
Language:	English
Published:	2015
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Online Access:	https://hdl.handle.net/10356/79533 http://hdl.handle.net/10220/25017
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-795332020-03-07T13:24:43Z Strain profile and size dependent electronic band structure of GeSn/SiSn quantum dots for optoelectronic application Tan, Chuan Seng Bose, Sumanta Fan, W. J. Chen, J. Zhang, D. H. School of Electrical and Electronic Engineering International Conference on Fibre Optics and Photonics Centre for Micro-/Nano-electronics (NOVITAS) DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics We study self-assembled GeSn/SiSn quantum dots for optoelectronic application in the Silicon photonics domain. Valence force field and k.p methods are used to investigate the strain distribution and band structure with size effect. MOE (Min. of Education, S’pore) Accepted version 2015-02-06T01:59:16Z 2019-12-06T13:27:37Z 2015-02-06T01:59:16Z 2019-12-06T13:27:37Z 2014 2014 Conference Paper Bose, S., Fan, W. J., Chen, J., Zhang, D.H., & Tan, C. S. (2014). Strain profile and size dependent electronic band structure of GeSn/SiSn quantum dots for optoelectronic application. 12th International Conference on Fiber Optics and Photonics. https://hdl.handle.net/10356/79533 http://hdl.handle.net/10220/25017 10.1364/PHOTONICS.2014.S4D.5 en © 2014 OSA. This is the author created version of a work that has been peer reviewed and accepted for publication by International Conference on Fibre Optics and Photonics, Optical Society of America. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1364/PHOTONICS.2014.S4D.5]. application/pdf application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Tan, Chuan Seng Bose, Sumanta Fan, W. J. Chen, J. Zhang, D. H. Strain profile and size dependent electronic band structure of GeSn/SiSn quantum dots for optoelectronic application
description	We study self-assembled GeSn/SiSn quantum dots for optoelectronic application in the Silicon photonics domain. Valence force field and k.p methods are used to investigate the strain distribution and band structure with size effect.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Tan, Chuan Seng Bose, Sumanta Fan, W. J. Chen, J. Zhang, D. H.
format	Conference or Workshop Item
author	Tan, Chuan Seng Bose, Sumanta Fan, W. J. Chen, J. Zhang, D. H.
author_sort	Tan, Chuan Seng
title	Strain profile and size dependent electronic band structure of GeSn/SiSn quantum dots for optoelectronic application
title_short	Strain profile and size dependent electronic band structure of GeSn/SiSn quantum dots for optoelectronic application
title_full	Strain profile and size dependent electronic band structure of GeSn/SiSn quantum dots for optoelectronic application
title_fullStr	Strain profile and size dependent electronic band structure of GeSn/SiSn quantum dots for optoelectronic application
title_full_unstemmed	Strain profile and size dependent electronic band structure of GeSn/SiSn quantum dots for optoelectronic application
title_sort	strain profile and size dependent electronic band structure of gesn/sisn quantum dots for optoelectronic application
publishDate	2015
url	https://hdl.handle.net/10356/79533 http://hdl.handle.net/10220/25017
_version_	1681049207051386880

Strain profile and size dependent electronic band structure of GeSn/SiSn quantum dots for optoelectronic application

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