Strain profile and size dependent electronic band structure of GeSn/SiSn quantum dots for optoelectronic application

• المؤلفون الرئيسيون: Tan, Chuan Seng, Bose, Sumanta, Fan, W. J., Chen, J., Zhang, D. H.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2015
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/79533; http://hdl.handle.net/10220/25017
• المؤسسة: Nanyang Technological University

We study self-assembled GeSn/SiSn quantum dots for optoelectronic application in the Silicon photonics domain. Valence force field and k.p methods are used to investigate the strain distribution and band structure with size effect.